vishay general semiconductor uh8jt & uhf8jt document number 88956 21-apr-06 www.vishay.com 1 1 2 to-220ac ito-220ac 1 2 pin 1 pin 2 case pin 1 pin 2 uh8jt uhf8jt high voltage ultrafast rectifier features ? oxide planar chip junction ? ultrafast recovery time ? soft recovery characteristics ? low switching losses, high efficiency ? high forward surge capability ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high voltage continuous mode power factor correctors (ccm pfc), switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. mechanical data case: to-220ac, ito-220ac epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum major ratings and characteristics i f(av) 8 a v rrm 600 v i fsm 80 a t rr 25 ns v f 1.47 v tj max. 175 c maximum ratings (t c = 25 c unless otherwise noted) parameter symbol uh8jt uhf8jt unit maximum repetitive peak reverse voltage v rrm 600 v maximum average forward rectified current (see fig. 1) i f(av) 8a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 80 a operating junction and storage temperature range t j , t stg - 55 to + 175 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 minute v ac 1500 v electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 4 a i f = 8 a t j = 25 c v f 1.82 2.30 - 3.0 v i f = 4 a i f = 8 a t j = 125 c 1.20 1.47 - 1.85 reverse current (1) at v r = 600 v t j = 25 c t j = 125 c i r - - 5.0 100 a
www.vishay.com 2 document number 88956 21-apr-06 vishay general semiconductor uh8jt & uhf8jt note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 20 25 ns at i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm -45 typical softness factor (t b /t a ) i f = 8 a, di/dt = 200 a/s, v r = 400 v, t j = 125 c s0.5 -- typical reverse recovery current i rm 5.5 7.0 a typical stored charge q rr 150 - nc typical forward recovery time at i f = 8 a, di/dt = 64 a/s, v f = 1.1 x v f max t fr 150 - ns thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol uh8jt uhf8jt unit typical thermal resistance from junction to case r jc 2.0 4.0 c/w electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit ordering information package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac uh8jt-e3/45 1.83 45 50/tube tube ito-220ac uhf8jt-e3/45 2.05 45 50/tube tube figure 1. maximum forward current derating curve case temperat u re (c) a v erage for w ard re ctified c u rrent (a) 12.0 10.0 8 .0 6.0 4.0 2.0 0 25 50 75 100 125 150 175 resisti v e or ind u cti v e load uhf 8 jt uh 8 jt figure 2. forward power loss characteristics t d - tp/t tp d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 0 0 2 4 6 8 10 12 14 16 1234567 8 9 a v erage for w ard c u rrent (a) a v erage po w er loss ( w )
document number 88956 21-apr-06 www.vishay.com 3 uh8jt & uhf8jt vishay general semiconductor figure 3. maximum non-repetitiv e peak forward surge current figure 4. typical instantaneous forward characteristics figure 5. typical revers e leakage characteristics 0 1 10 100 100 8 0 60 40 20 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = 25 c t j = 175 c t j = 125 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 100 10 1 0.1 0.2 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2 2.2 2.4 2.6 2. 8 1000 100 10 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0.01 0.001 t j = 125 c t j = 175 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) figure 6. typical junction capacitance figure 7. typical transient thermal impedance figure 8. typical transient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 1000 100 10 1 1 10 100 0.1 10 1 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) uh 8 jt 10 1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) uhf 8 jt
www.vishay.com 4 document number 88956 21-apr-06 vishay general semiconductor uh8jt & uhf8jt package outline dimensions in inches (millimeters) 0.154 (3.91) 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027(0.6 8 ) 0.205(5.20) 0.195(4.95) 0.560 (14.22) 0.530 (13.46) 0.022(0.56) 0.014(0.36) 0.110 (2.79) 0.100 (2.54) 12 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.105 (2.67) 0.095 (2.41) 0.635 (16.13) 0.625 (15. 8 7) 0.603 (15.32) 0.573 (14.55) pi n 0.415 (10.54)max. 0.370 (9.40) 0.360 (9.14) 0.057 (1.45) 0.045 (1.14) case pi n 2 pi n 1 to-220ac 0.404 (10.26) 0.3 8 4 (9.75) see note 0.076 ref. (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) pi n 1 2 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.3 8 ) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.076 ref. (1.93) ref. see note 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.190 (4. 8 3) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) dia. 0.122 (3.0 8 )dia. 7 ref. 0.110 (2.79) 0.100 (2.54) 0.02 8 (0.71) 0.020 (0.51) ito-220ac expos u re (0.25) 0.010 max. copper n ote: copper expos u re is allo w a b le for 0.005 (0.13) max. from the b ody
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